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mrf5s19100hr3 MRF5S19100HSR3 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for pcn and pcs base station applications with frequencies from 1900 to 2000 mhz. suitable for tdma , cdma and multicarrier amplifier applications. ? typical 2 - carrier n - cdma performance: v dd = 28 volts, i dq = 1000 ma, p out = 22 watts avg., full frequency band. is - 95 (pilot, sync, paging, traffic codes 8 through 13) channel bandwidth = 1.2288 mhz. par = 9.8 db @ 0.01% probability on ccdf. power gain ? 13.9 db drain efficiency ? 25.5% im3 @ 2.5 mhz offset ? - 36.5 dbc in 1.2288 mhz channel bandwidth acpr @ 885 khz offset ? - 50.7 dbc in 30 khz channel bandwidth ? capable of handling 10:1 vswr, @ 28 vdc, 1960 mhz, 100 watts cw output power features ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? lower thermal resistance package ? low gold plating thickness on leads, 40 ? nominal. ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain- source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 269 1.54 w w/ c storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value (1) unit thermal resistance, junction to case case temperature 75 c, 100 w cw case temperature 70 c, 22 w cw r jc 0.64 0.65 c/w 1. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrf5s19100h rev. 4, 5/2006 freescale semiconductor technical data mrf5s19100hr3 MRF5S19100HSR3 1930 - 1990 mhz, 22 w avg., 28 v 2 x n - cdma lateral n - channel rf power mosfets case 465 - 06, style 1 ni - 780 mrf5s19100hr3 case 465a - 06, style 1 ni - 780s MRF5S19100HSR3 ? freescale semiconductor, inc., 2006. all rights reserved.
2 rf device data freescale semiconductor mrf5s19100hr3 MRF5S19100HSR3 table 3. esd protection characteristics test conditions class human body model 2 (minimum) machine model m3 (minimum) charge device model c7 (minimum) table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics (dc) gate threshold voltage (v ds = 10 vdc, i d = 240 adc) v gs(th) ? 2.7 ? vdc gate quiescent voltage (v ds = 28 vdc, i d = 1000 madc) v gs(q) ? 3.7 ? vdc drain- source on - voltage (v gs = 10 vdc, i d = 2.4 adc) v ds(on) ? 0.26 ? vdc forward transconductance (v ds = 10 vdc, i d = 2.4 adc) g fs ? 6.3 ? s dynamic characteristics reverse transfer capacitance (1) (v ds = 28 vdc, v gs = 0, f = 1.0 mhz) c rss ? 2.2 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 1000 ma, p out = 22 w avg., f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 =1990 mhz, 2 - carrier n - cdma, 1.2288 mhz channel bandwidth carriers. acpr measured in 30 khz bandwidth @ 885 khz offset. im3 measured in 1.2288 mhz channel bandwidth @ 2.5 mhz offset. par = 9.8 db @ 0.01% probability on ccdf. power gain g ps 12.5 13.9 ? db drain efficiency d 24 25.5 ? % intermodulation distortion im3 ? - 36.5 -35 dbc adjacent channel power ratio acpr ? - 50.7 -48 dbc input return loss irl ? -13 -9 db 1. part is internally matched both on input and output.
mrf5s19100hr3 MRF5S19100HSR3 3 rf device data freescale semiconductor z9 0.590 x 0.071 microstrip z10 0.450 x 1.133 microstrip z11 0.450 x 0.141 microstrip z12 0.490 x 0.080 microstrip z13 0.085 x 0.080 microstrip z14 1.124 x 0.080 microstrip pcb arlon gx - 0300- 55 - 22, 0.030 , r = 2.55 figure 1. mrf5s19100hr3(sr3) test circuit schematic z1, z3 0.140 x 0.080 microstrip z2 0.450 x 0.080 microstrip z4 0.525 x 0.080 microstrip z5 0.636 x 0.141 microstrip z6 0.650 x 0.050 microstrip z7 0.320 x 1.299 microstrip z8 0.091 x 1.133 microstrip c3 r2 v bias v supply c13 c9 c8 c15 c6 c7 c1 rf output rf input r1 z1 z2 z3 z4 z5 z6 z9 z11 z12 z13 + dut c12 c11 r4 w1 c2 z10 z8 b1 r3 + c4 c5 c16 z7 + + c14 + z14 c17 c10 + table 5. mrf5s19100hr3(sr3) test circuit component designations and values part description part number manufacturer b1 short rf bead 95f786 newark c1 22 pf chip capacitor 100b220cp 500x atc c2 10 pf chip capacitor 100b100cp 500x atc c3 1 f, 50 v tantalum capacitor t494c105(1)050as kemet c4, c12 0.1 f chip capacitors cdr33bx104akws kemet c5, c11 1k pf chip capacitors 100b102jp 500x atc c6 2.7 pf chip capacitor 100b2r7bp 500x atc c7 4.3 pf chip capacitor 100b4r3jp 500x atc c8 10 f, 35 v tantalum capacitor t494d106(1)035as kemet c9, c10, c13, c14 22 f, 35 v tantalum capacitors t494x226(1)035as kemet c15 0.6 ? 4.5 gigatrim variable capacitor 44f3358 newark c16 2.2 pf chip capacitor 100b2r2bp 500x atc c17* 0.3 pf chip capacitor 100b0r3bp 500x atc r1 1 k chip resistor d5534m07b1k00r newark r2 560 k chip resistor cr1206 564jt newark r3, r4 12 chip resistors rm73b2b120jt garrett electronics w1 1 turn 14 gauge wire * need for part will vary from fixture to fixture.
4 rf device data freescale semiconductor mrf5s19100hr3 MRF5S19100HSR3 figure 2. mrf5s19100hr3(sr3) test circuit component layout cut out area rev 1 mrf5s19100 b1 c2 c4 c12 c9 c3 c10 c5 c11 c6 c7 c8 w1 r4 c15 c14 c13 c1 r3 r1 r2 v gg v dd c17 c16 freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
mrf5s19100hr3 MRF5S19100HSR3 5 rf device data freescale semiconductor typical characteristics 5 15 1860 ?55 40 irl g ps acpr im3 f, frequency (mhz) figure 3. 2 - carrier n - cdma broadband performance g ps , power gain (db) im3 (dbc), acpr (dbc) ?35 ?15 ?20 ?25 ?30 input return loss (db) irl, v dd = 28 vdc, p out = 22 w (avg.), i dq = 1000 ma 2?carrier n?cdma, 2.5 mhz carrier spacing 13 30 11 20 9 ?35 7 ?45 1880 1900 1920 1940 1960 1980 2000 2020 2040 ?10 100 10 16 1 1300 ma i dq = 1500 ma 1000 ma p out , output power (watts) pep figure 4. two - tone power gain versus output power g ps , power gain (db) v dd = 28 vdc f1 = 1958.75 mhz, f2 = 1961.25 mhz two?tone measurement, 2.5 mhz tone spacing 760 ma 530 ma 10 15 14 13 11 100 ?55 ?15 1 p out , output power (watts) pep figure 5. third order intermodulation distortion versus output power imd, third order intermodulation distortion (dbc) 1000 ma 1300 ma v dd = 28 vdc f1 = 1958.75 mhz, f2 = 1961.25 mhz two?tone measurement, 2.5 mhz tone spacing 760 ma i dq = 1500 ma 10 ?20 ?25 ?30 ?35 ?40 ?45 ?50 10 ?55 ?25 0.1 7th order two?tone spacing (mhz) figure 6. intermodulation distortion products versus tone spacing intermodulation distortion (dbc) imd, ?30 ?35 ?40 ?45 ?50 1 5th order 3rd order 44 46 58 32 p3db = 51.98 dbm (157.81 w) p in , input power (dbm) figure 7. pulse cw output power versus input power p out , output power (dbm) v dd = 28 vdc, i dq = 1000 ma pulsed cw, 8 sec(on), 1 msec(off) f = 1960 mhz 42 p1db = 51.3 dbm (135.01 w) ideal actual 57 56 55 54 53 52 51 49 47 33 34 35 36 37 38 39 40 41 50 48 43 40 v dd = 28 vdc, p out = 100 w (pep), i dq = 1000 ma two?tone measurements (f1 + f2)/2 = center frequency of 1960 mhz 530 ma 12 35 25 ?50 ?40 ?30 14 12 10 8 6 1.2288 mhz channel bandwidth par = 9.8 db @ 0.01% probability (ccdf) d d , drain efficiency (%)
6 rf device data freescale semiconductor mrf5s19100hr3 MRF5S19100HSR3 typical characteristics 0 35 1 ?70 ?21 g ps acpr p out , output power (watts) avg. figure 8. 2 - carrier n - cdma acpr, im3, power gain and drain efficiency versus output power im3 (dbc), acpr (dbc) v dd = 28 vdc, i dq = 1000 ma f1 = 1958.75 mhz, f2 = 1961.25 mhz 2 x n?cdma, 2.5 mhz @ 1.2288 mhz channel bandwidth, par = 9.8 db @ 0.01% probability (ccdf) im3 ?28 30 ?35 25 ?42 20 ?49 15 ?56 10 5 ?63 10 220 10 9 100 t j , junction temperature ( c) figure 9. mttf factor versus junction temperature this above graph displays calculated mttf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mttf factor by i d 2 for mttf in a particular application. 10 8 10 7 10 6 120 140 160 180 200 75 mttf factor (hours x amps 2 ) n - cdma test signal d d , drain efficiency (%), g ps , power gain (db) 10 0.0001 100 0 peak?to?average (db) figure 10. 2 - carrier ccdf n - cdma 10 1 0.1 0.01 0.001 2468 is?95 cdma (pilot, sync, paging, traffic codes 8 through 13) 1.2288 mhz channel bandwidth carriers. acpr measured in 30 khz bandwidth @ 885 khz offset. im3 measured in 1.2288 mhz bandwidth @ 2.5 mhz offset. par = 9.8 db @ 0.01% probability on ccdf. probability (%) f, frequency (mhz) ?100 0 figure 11. 2 - carrier n - cdma spectrum ?10 ?20 ?30 ?40 ?50 ?60 ?70 ?80 ?90 ?acpr in 30 khz integrated bw +acpr in 30 khz integrated bw ?im3 in 1.2288 mhz integrated bw +im3 in 1.2288 mhz integrated bw 1.2288 mhz channel bw 6 1.5 4.5 3 0 ?1.5 ?3 ?4.5 ?6 ?7.5 7.5 (db)
mrf5s19100hr3 MRF5S19100HSR3 7 rf device data freescale semiconductor v dd = 28 vdc, i dq = 1000 ma, p out = 22 w avg. figure 12. series equivalent source and load impedance f = 1930 mhz f = 1990 mhz z o = 10 f = 1930 mhz f = 1990 mhz f mhz z source z load 1930 1960 1990 4.45 - j5.32 5.12 - j5.45 4.53 - j5.40 1.98 - j2.58 1.83 - j2.55 1.60 - j2.15 z load z source z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network
8 rf device data freescale semiconductor mrf5s19100hr3 MRF5S19100HSR3 notes
mrf5s19100hr3 MRF5S19100HSR3 9 rf device data freescale semiconductor notes
10 rf device data freescale semiconductor mrf5s19100hr3 MRF5S19100HSR3 notes
mrf5s19100hr3 MRF5S19100HSR3 11 rf device data freescale semiconductor package dimensions case 465 - 06 issue g ni - 780 mrf5s19100hr3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 1.335 1.345 33.91 34.16 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 g 1.100 bsc 27.94 bsc h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.772 0.788 19.60 20.00 q .118 .138 3.00 3.51 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 3. source 1 3 2 d g k c e h s f s 0.365 0.375 9.27 9.52 m 0.774 0.786 19.66 19.96 aaa 0.005 ref 0.127 ref bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref q 2x m a m bbb b m t m a m bbb b m t b b (flange) seating plane m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) m a m aaa b m t (insulator) r m a m ccc b m t (lid) case 465a - 06 issue h ni - 780s MRF5S19100HSR3 notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 0.805 0.815 20.45 20.70 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 m 0.774 0.786 19.61 20.02 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 5. source 1 2 d k c e h f 3 u (flange) 4x z (lid) 4x bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref aaa 0.005 ref 0.127 ref s 0.365 0.375 9.27 9.52 n 0.772 0.788 19.61 20.02 u ??? 0.040 ??? 1.02 z ??? 0.030 ??? 0.76 m a m bbb b m t b b (flange) 2x seating plane m a m ccc b m t m a m bbb b m t a a (flange) t n (lid) m (insulator) m a m ccc b m t m a m aaa b m t r (lid) s (insulator)
12 rf device data freescale semiconductor mrf5s19100hr3 MRF5S19100HSR3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 fax: 303 - 675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf5s19100h rev. 4, 5/2006

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